Paul Saunier
24Patents
8h-index
18Co-inventors
72Inventor score
Filing activity: May 30, 1984 → Sep 15, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5521406A | Integrated circuit with improved thermal impedance | Electricity | 38 | Expired |
| US5300795A | GaAs FET with resistive AlGaAs | Electricity | 31 | Expired |
| US4599790A | Process for forming a T-shaped gate structure | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5717231A | Antenna having elements with improved thermal impedance | Electricity | 19 | Expired |
| US4558337A | Multiple high electron mobility transistor structures without inverted heterojunctions | Electricity | 19 | Expired |
| US5612257A | Method of making flip-chip microwave integrated circuit | Electricity | 12 | Expired |
| US7936210B2 | Gallium nitride traveling wave structures | Electricity | 12 | Active |
| US5254492A | Method of fabricating an integrated circuit for providing low-noise and high-power microwave operation | Emerging Cross-Sectional Technologies | 12 | Expired |
| US9054167B2 | High electron mobility transistor structure and method | Electricity | 8 | Active |
| US8350295B1 | Device structure including high-thermal-conductivity substrate | Electricity | 7 | Active |
| US5681766A | Method of making integrated circuit capable of low-noise and high-power microwave operation | Emerging Cross-Sectional Technologies | 6 | Expired |
| US9202905B1 | Digital alloy layer in a III-nitrade based heterojunction field effect transistor | Electricity | 5 | Active |
| US6215136A | Integrated circuit capable of low-noise and high-power microwave operation | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6697412B2 | Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers | Electricity | 3 | Expired |
| US10374553B2 | Microwave transmitter with improved information throughput | Electricity | 3 | Active |
| US10332820B2 | Satellite communication transmitter with improved thermal management | Electricity | 2 | Active |
| US8143654B1 | Monolithic microwave integrated circuit with diamond layer | Electricity | 2 | Active |
| US8975664B2 | Group III-nitride transistor using a regrown structure | Electricity | 2 | Active |
| US10804853B2 | Microwave transmitter with improved information throughput | Electricity | 1 | Active |
| US10811335B2 | Satellite communication transmitter with improved thermal management | Electricity | 1 | Active |
| US10985082B2 | Apparatus for efficient high-frequency communications | Electricity | 1 | Active |
| US11594466B2 | Wireless transmitter with improved thermal management | Electricity | 0 | Active |
| US11495515B2 | Wireless communication system with improved thermal performance | Electricity | 0 | Active |
| US9029914B2 | Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.