Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection
US10379254B2 · kind B2 · utility
2Cited by
13References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/714
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.