Yoann Goasduff
6Patents
2h-index
6Co-inventors
40Inventor score
Filing activity: Mar 5, 2013 → Nov 23, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8901634B2 | Nonvolatile memory cells with a vertical selection gate of variable depth | Physics | 9 | Active |
| US9076878B2 | Non-volatile memory with vertical selection transistors | Electricity | 4 | Active |
| US10379254B2 | Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection | Electricity | 2 | Active |
| US12360135B2 | Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a projection | Electricity | 0 | Active |
| US11536872B2 | Method for producing an integrated circuit pointed element comprising etching first and second etchable materials with a particular etchant to form an open crater in a project | Electricity | 0 | Active |
| US9472413B2 | Method for producing a pattern in an integrated circuit and corresponding integrated circuit | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.