Patent · US Active

Semiconductor memory device with burst mode

US10381066B2 · kind B2 · utility

3Cited by
0References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 18, 2017
Grant dateAug 13, 2019
Priority date
Expiry dateSep 18, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C8/12
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device may include a data input and output circuit (I/O) configured to selectively or simultaneously drive input and output lines according to a burst length and a location of a memory area selected by an address to allow the semiconductor device to receive or output data regardless of the burst length being changed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.