Methods for forming a silicon nitride film
US10381219B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a silicon nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a silicon precursor; and contacting the substrate with a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Methods for improving the etch characteristics of a silicon nitride film utilizing a post deposition plasma treatment are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.