Method of processing substrate
US10381226B2 · kind B2 · utility
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Key dates
| Filing date | Jul 27, 2017 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Jul 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate to enable selective doping without a photolithography process is provided. The method includes forming a diffusion barrier on the substrate having a patterned structure using plasma deposition method, removing the diffusion barrier except for part of the diffusion barrier using wet etching, forming a diffusion source layer on the patterned structure and the part of the diffusion barrier, and applying energy to the diffusion source layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.