Patent · US Active

Ion beam etching

US10381231B2 · kind B2 · utility

0Cited by

3References

11Claims

0Family size

Assignee

Veeco Instruments Inc. · US

Inventors

Timothy Pratt · Blacksburg, US
Katrina Rook · Hicksville, US

Key dates

Filing date	May 15, 2017
Grant date	Aug 13, 2019
Priority date	—
Expiry date	Jun 27, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/334
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.