Tungsten feature fill with nucleation inhibition

US10381266B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Tsung-Han Yang · San Jose, US
• Anand Chandrashekar · Sunnyvale, US
• Jasmine Lin · San Jose, US

Key dates

• Filing date: Jul 3, 2017
• Grant date: Aug 13, 2019
• Expiry date: Jul 3, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76898
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.