Patent · US Active

Power semiconductor module

US10381283B2 · kind B2 · utility

1Cited by

0References

13Claims

0Family size

Assignee

DANFOSS SILICON POWER GMBH · DE

Inventors

Frank Osterwald · Kiel, DE
Ronald Eisele · Surendorf, DE
Holger Ulrich · Nortorf, DE

Key dates

Filing date	Jul 4, 2016
Grant date	Aug 13, 2019
Priority date	—
Expiry date	Jul 4, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1815
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention discloses a power semiconductor module, comprising: a substrate; a semiconductor provided on a top side of the substrate; and a package formed on the semiconductor and the substrate, wherein the package has openings at a top side thereof, through which terminal contacts of the semiconductor and the substrate are exposed outside and accessible from outside.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.