Air gap three-dimensional cross rail memory device and method of making thereof
US10381366B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Feb 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes first conductive rails laterally extending along a first horizontal direction over a substrate, a rectangular array of first memory pillar structures, each containing a memory element, overlying top surfaces of the first conductive rails, second conductive rails laterally extending along a second horizontal direction and overlying top surfaces of the rectangular array of first memory pillar structures, and a one-dimensional array of first cavities free of solid material portions therein, laterally extending along the second horizontal direction and located between neighboring pairs of the second conductive rails.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.