MOS capacitor and image sensor having the same
US10381492B2 · kind B2 · utility
0Cited by
2References
10Claims
0Family size
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Key dates
| Filing date | Sep 20, 2017 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Oct 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.