Light emitting element with an enhanced electroluminescence effect
US10381508B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2018 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Oct 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
This invention discloses a light emitting element to solve the problem of lattice mismatch and inequality of electron holes and electrons of the conventional light emitting elements. The light emitting element comprises a gallium nitride layer, a gallium nitride pyramid, an insulating layer, a first electrode and a second electrode. The gallium nitride pyramid contacts with the gallium nitride layer, with a c-axis of the gallium nitride layer opposite in direction to a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, with broken bonds at the mounting face of the gallium nitride layer and the larger end face of the gallium nitride pyramid welded with each other, with the gallium nitride layer and the gallium nitride pyramid being used as a p-type semiconductor and an n-type semiconductor respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.