Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits

US10381542B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Josephine B. Chang · Mahopac, US
• Gerald W. Gibson · Orlando, US
• Mark B. Ketchen · Hadley, US

Key dates

• Filing date: Apr 30, 2015
• Grant date: Aug 13, 2019
• Expiry date: Jun 10, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68

Abstract

A technique relates to a trilayer Josephson junction structure. A dielectric layer is on a base electrode layer that is on a substrate. A counter electrode layer is on the dielectric layer. First and second counter electrodes are formed from the counter electrode layer. First and second dielectric layers are formed from the dielectric layer. First and second base electrodes are formed from base electrode layer. The first counter electrode, first dielectric layer, and first base electrode form a first stack. The second counter electrode, second dielectric layer, and second base electrode form a second stack. A shunting capacitor is between first and second base electrodes. An ILD layer is deposited on the substrate, the first and second counter electrodes, and the first and second base electrodes. A contact bridge connects the first and second counter electrodes. An air gap is formed underneath the contact bridge by removing ILD.