Inventor · Orlando, FL, US

Gerald W. Gibson

25Patents
9h-index
34Co-inventors
75Inventor score

Filing activity: Aug 26, 1997 → Sep 15, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US6110395A Method and structure for controlling plasma uniformity Electricity 81 Expired
US9564573B1 Trilayer josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits Electricity 32 Active
US6680542B1 Damascene structure having a metal-oxide-metal capacitor associated therewith Electricity 19 Expired
US7126198B2 Protruding spacers for self-aligned contacts Electricity 15 Expired
US6362094B1 Hydrogenated silicon carbide as a liner for self-aligning contact vias Electricity 12 Expired
US10381542B2 Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits Electricity 11 Active
US7332775B2 Protruding spacers for self-aligned contacts Electricity 11 Active
US6879046B2 Split barrier layer including nitrogen-containing portion and oxygen-containing portion Emerging Cross-Sectional Technologies 9 Expired
US6798043B2 Structure and method for isolating porous low-k dielectric films Electricity 9 Expired
US8828749B2 Methodology for evaluation of electrical characteristics of carbon nanotubes Electricity 4 Active
US10199554B2 Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits Electricity 4 Active
US7695897B2 Structures and methods for low-k or ultra low-k interlayer dielectric pattern transfer Electricity 4 Active
US7087498B2 Method for controlling trench depth in shallow trench isolation features Electricity 3 Expired
US7981305B2 High-density field emission elements and a method for forming said emission elements Electricity 3 Active
US7632690B2 Real-time gate etch critical dimension control by oxygen monitoring Electricity 2 Active
US8853856B2 Methodology for evaluation of electrical characteristics of carbon nanotubes Electricity 2 Active
US7994639B2 Microelectronic structure including dual damascene structure and high contrast alignment mark Physics 1 Active
US7261745B2 Real-time gate etch critical dimension control by oxygen monitoring Electricity 1 Expired
US7564178B2 High-density field emission elements and a method for forming said emission elements Electricity 1 Active
US8449781B2 Selective etch back process for carbon nanotubes intergration Emerging Cross-Sectional Technologies 0 Active
US11882771B2 Smooth metal layers in Josephson junction devices Electricity 0 Active
US12290008B2 Scaled quantum circuits Electricity 0 Active
US12294369B2 Asymmetrical clock separation and stage delay optimization in single flux quantum logic Electricity 0 Active
US11133452B2 Trilayer Josephson junction structure with small air bridge and no interlevel dielectric for superconducting qubits Electricity 0 Active
US12301176B2 Low loss travelling wave parametric devices using planar capacitors Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.