Memory cell having magnetic tunnel junction and thermal stability enhancement layer
US10381553B2 · kind B2 · utility
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140References
22Claims
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Key dates
| Filing date | Jul 21, 2017 |
| Grant date | Aug 13, 2019 |
| Priority date | — |
| Expiry date | Nov 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be include a layer of CoFeB ferromagnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.