Patent · US Active

Pressure sensor device and manufacturing method

US10386255B2 · kind B2 · utility

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0References

26Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Thoralf Kautzsch · Dresden, DE
Heiko Froehlich · Radebeul, DE
Marco Haubold · Dresden, DE
Andre Roeth · Dresden, DE
Maik Stegemann · Freital, DE
Mirko Vogt · Dresden, DE

Key dates

Filing date	Jul 12, 2017
Grant date	Aug 20, 2019
Priority date	—
Expiry date	Jan 12, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG01L19/0618
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.