Magnetoresistive element and magnetic memory
US10388343B2 · kind B2 · utility
16Cited by
4References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes: a first magnetic layer having a magnetization direction that is variable; a second magnetic layer having a magnetization direction that is invariable; a first non-magnetic layer provided between the first magnetic layer and the second magnetic layer; a third magnetic layer that fixes the magnetization direction of the second magnetic layer and that antiferromagnetically couples with the second magnetic layer; and a second non-magnetic layer provided between the second magnetic layer and the third magnetic layer. The second non-magnetic layer includes ruthenium (Ru) and a metal element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.