Writing of a magnetic memory with electric pulses
US10388349B2 · kind B2 · utility
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29Claims
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Key dates
| Filing date | Sep 21, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Sep 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and memory circuits for altering a magnetic direction of a magnetic memory cell using picosecond electric current pulses are disclosed. One method includes directing a first electric current pulse through the magnetic memory cell that includes a ferrimagnetic material layer to heat the ferrimagnetic material layer to toggle a magnetic direction of the ferrimagnetic material layer from a first magnetic direction to a second magnetic direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.