Sayeef Salahuddin
20Patents
2h-index
26Co-inventors
53Inventor score
Filing activity: Jun 28, 2006 → Jul 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10964468B2 | Magnetic memory structures using electric-field controlled interlayer exchange coupling (IEC) for magnetization switching | Electricity | 9 | Active |
| US8558571B2 | All-spin logic devices | Electricity | 8 | Active |
| US11670620B2 | Device with embedded high-bandwidth, high-capacity memory using wafer bonding | Electricity | 2 | Active |
| US11740192B2 | System and method for an acoustically driven ferromagnetic resonance sensor device | Physics | 2 | Active |
| US10607674B2 | Stochastic switching device with adjustable randomness | Electricity | 2 | Active |
| US11120884B2 | Implementing logic function and generating analog signals using NOR memory strings | Electricity | 2 | Active |
| US11675500B2 | High capacity memory circuit with low effective latency | Electricity | 2 | Active |
| US11488676B2 | Implementing logic function and generating analog signals using NOR memory strings | Electricity | 1 | Active |
| US7626236B2 | Transistor including paramagnetic impurities and having anti-parallel ferromagnetic contacts | Emerging Cross-Sectional Technologies | 1 | Active |
| US11515432B2 | Cool electron erasing in thin-film storage transistors | Electricity | 1 | Active |
| US12073082B2 | High capacity memory circuit with low effective latency | Electricity | 1 | Active |
| US12411606B2 | High capacity memory circuit with low effective latency | Electricity | 0 | Active |
| US12366618B2 | System for an acoustically driven ferromagnetic resonance sensor device | Physics | 0 | Active |
| US12406966B2 | Device with embedded high-bandwidth, high-capacity memory using wafer bonding | Electricity | 0 | Active |
| US12183834B2 | Cool electron erasing in thin-film storage transistors | Electricity | 0 | Active |
| US11742011B2 | Voltage-controlled gain-cell magnetic memory | Electricity | 0 | Active |
| US12068286B2 | Device with embedded high-bandwidth, high-capacity memory using wafer bonding | Electricity | 0 | Active |
| US11837211B2 | Magnetic field sensor using acoustically driven ferromagnetic resonance | Physics | 0 | Active |
| US11923341B2 | Memory device including modular memory units and modular circuit units for concurrent memory operations | Electricity | 0 | Active |
| US10388349B2 | Writing of a magnetic memory with electric pulses | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.