Film forming method, boron film, and film forming apparatus
US10388524B2 · kind B2 · utility
2Cited by
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12Claims
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Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 Pa (5 to 250 mTorr).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.