Method of manufacturing semiconductor device
US10388527B2 · kind B2 · utility
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1References
2Claims
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Key dates
| Filing date | Oct 6, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Oct 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is provided with: implanting charged particles including oxygen into a surface of a SiC wafer; and forming a Schottky electrode that makes Schottky contact with the SiC wafer on the surface after the implantation of the charged particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.