Narumasa Soejima
44Patents
4h-index
50Co-inventors
62Inventor score
Filing activity: Jun 22, 2005 → Jan 27, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7777252B2 | III-V hemt devices | Electricity | 74 | Active |
| US9136372B2 | Silicon carbide semiconductor device | Electricity | 32 | Active |
| US8440524B2 | Semiconductor device manufacturing method | Electricity | 7 | Active |
| US8575689B2 | Silicon carbide semiconductor device and manufacturing method of the same | Electricity | 6 | Active |
| US8492867B2 | Semiconductor device including cell region and peripheral region having high breakdown voltage structure | Electricity | 4 | Active |
| US9853139B2 | Semiconductor device and method for manufacturing the semiconductor device | Electricity | 4 | Active |
| US8748975B2 | Switching element and manufacturing method thereof | Electricity | 4 | Active |
| US9954096B2 | Switching device and method of manufacturing the same | Electricity | 3 | Active |
| US8008749B2 | Semiconductor device having vertical electrodes structure | Electricity | 3 | Expired |
| US9818860B2 | Silicon carbide semiconductor device and method for producing the same | Electricity | 3 | Active |
| US9793376B2 | Silicon carbide semiconductor device and method of manufacturing the same | Electricity | 3 | Active |
| US8618555B2 | Silicon carbide semiconductor device and method of manufacturing the same | Electricity | 2 | Active |
| US9543428B2 | Silicon carbide semiconductor device and method for producing the same | Electricity | 2 | Active |
| US9773883B2 | Method for manufacturing insulated gate type switching device having low-density body region and high-density body region | Electricity | 2 | Active |
| US7800130B2 | Semiconductor devices | Electricity | 1 | Expired |
| US10290707B2 | Semiconductor device | Electricity | 1 | Active |
| US8975139B2 | Manufacturing method of silicon carbide semiconductor device | Electricity | 1 | Active |
| US9779906B2 | Electron emission device and transistor provided with the same | Electricity | 1 | Active |
| US9201094B2 | Wafer examination device and wafer examination method | Electricity | 1 | Active |
| US9142411B2 | Method for producing semiconductor device | Electricity | 1 | Active |
| US8525223B2 | Silicon carbide semiconductor device | Electricity | 1 | Active |
| US9337298B2 | Silicon carbide semiconductor device and method for producing the same | Electricity | 1 | Active |
| US9640655B2 | Semiconductor device and manufacturing method of semiconductor device | Electricity | 1 | Active |
| US10388527B2 | Method of manufacturing semiconductor device | Electricity | 1 | Active |
| US9257501B2 | Semiconductor device | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.