Apparatus for depositing a layer on a substrate in a processing gas
US10388559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2016 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Sep 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Apparatus for depositing a layer on a substrate in a process gas includes a chuck containing a first surface for supporting the substrate, a clamp for securing the substrate to the first surface of the chuck, an evacuatable enclosure enclosing the chuck and the clamp and control apparatus. The evacuatable enclosure includes an inlet, through which the processing gas is insertable into the enclosure. The control apparatus is adapted to move at least one of the chuck and the clamp relative to, and independently of, one another to adjust a spacing between the chuck and the clamp during a single deposition process while maintaining a flow of the processing gas and a pressure within the enclosure that is less than atmospheric pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.