Method of manufacturing conductors and semiconductor device which includes conductors
US10388644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Aug 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing conductors for a semiconductor device, the method comprising: forming a structure on a base; and eliminating selected portions of members of a first set and selected portions of members of a second set from the structure. The structure includes: capped first conductors arranged parallel to a first direction; and capped second conductors arranged parallel to and interspersed with the capped first conductors. The capped first conductors are organized into at least first and second sets. Each member of the first set has a first cap with a first etch sensitivity. Each member of the second set has a second cap with a second etch sensitivity. Each of the capped second conductors has a third etch sensitivity. The first, second and third etch sensitivities are different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.