Patent · US Active

Formation of Ohmic contacts for a device provided with a region made of III-V material and a region made of another semiconductor material

US10388653B2 · kind B2 · utility

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15Claims
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Key dates

Filing dateAug 11, 2016
Grant dateAug 20, 2019
Priority date—
Expiry dateAug 11, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/017
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A production of contact zones for a transistor device including the steps of:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.