Manufacturing method of semiconductor device
US10388749B2 · kind B2 · utility
0Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2018 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Jul 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a gate structure, a spacer, a mask layer, and at least one void. The gate structure is disposed on the substrate, and the gate structure includes a metal gate electrode. The spacer is disposed on sidewalls of the gate structure, and a topmost surface of the spacer is higher than a topmost surface of the metal gate electrode. The mask layer is disposed on the gate structure. At least one void is disposed in the mask layer and disposed between the metal gate electrode and the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.