Method of manufacturing semiconductor device
US10388762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Jun 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.