Semiconductor detector
US10388818B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Jun 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/241
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.