Light-emitting semiconductor chip
US10388828B2 · kind B2 · utility
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14References
13Claims
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Key dates
| Filing date | Jul 21, 2017 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Aug 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.