Silicon substrate processing method and liquid ejection head manufacturing method
US10391772B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB41J2202/22
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
Provided is a silicon substrate processing method including: providing a silicon substrate with a sacrificial layer formed in the form of an island on the front surface thereof, the front surface being a surface on a side where the flow path of an ejection port for ejecting liquid is to be formed, the sacrificial layer having a higher etching rate than the silicon substrate; forming a mask layer on the back surface, the back surface being a surface opposite from the front surface, the mask layer being a layer that does not include an opening at a portion of the back surface opposite from the sacrificial layer; forming a non-penetrating hole from an opening on the back surface of the silicon substrate; and forming a beam on the back surface side by performing anisotropic etching on the silicon substrate in which the non-penetrating hole is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.