Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

US10392531B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Vijay Immanuel Raman · Mannheim, DE
• Sophia Ebert · Mannheim, DE
• Mario Brands · Ludwigshafen, DE
• Yongqing Lan · Potsdam, US
• Philipp Zacharias · Leeds, GB
• Ilshat Gubaydullin · Ludwigshafen, DE
• Yuzhuo Li

Key dates

• Filing date: Nov 25, 2010
• Grant date: Aug 27, 2019
• Expiry date: Feb 27, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, —an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.