Semiconductor silicon-germanium thin film preparation method
US10392691B2 · kind B2 · utility
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Key dates
| Filing date | Aug 10, 2016 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Aug 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor silicon-germanium thin film preparation method, comprising the following steps: cleaning a mono-crystalline silicon substrate and then disposing the same on a substrate table; respectively sputtering a silicon single thin film and a germanium single thin film; depositing a silicon-germanium alloy thin film having different components on another single crystal silicon substrate using a co-sputtering method, measuring the thickness of the deposited thin film, and obtaining a silicon-germanium alloy thin film having different component ratios.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.