Reflective mask blank, reflective mask and method of manufacturing semiconductor device
US10394113B2 · kind B2 · utility
7Cited by
1References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 15, 2015 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Apr 3, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2204/08
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An object of the present invention is to obtain a reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm−1 is not more than 17 nm4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.