Nonvolatile method device and sensing method of the same
US10395727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2018 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Mar 16, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes multi-level cells. A sensing method of the nonvolatile memory device includes: precharging a bit line and a sense-out node during a first precharge interval; identifying a first state of a selected memory cell, by developing the sense-out node during a first develop time and sensing a first voltage level of the sense-out node; precharging the sense-out node to a second sense-out precharge voltage; and identifying the first state of the selected memory cell from a second state adjacent thereto, by developing the sense-out node during a second develop time different from the first develop time and sensing a second voltage level of the sense-out node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.