Inventor · Anyang-si, KR

Jin Bae Bang

6Patents
2h-index
10Co-inventors
37Inventor score

Filing activity: Mar 16, 2018 → May 4, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US10497453B2 Memory device Physics 3 Active
US10665312B2 Nonvolatile memory device configured to adjust a read parameter based on a degradation level Emerging Cross-Sectional Technologies 3 Active
US10803958B2 Non-volatile memory device and a method of operating the same Electricity 2 Active
US10910080B2 Nonvolatile memory device configured to adjust a read parameter based on degradation level Emerging Cross-Sectional Technologies 1 Active
US10395727B2 Nonvolatile method device and sensing method of the same Physics 0 Active
US10672488B2 Memory device Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.