Patterning material film stack comprising hard mask layer having high metal content interface to resist layer
US10395925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2017 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Dec 28, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate. Forming the patterning material film stack includes forming a hard mask layer and forming a resist layer over the hard mask layer. The hard mask layer is formed such that an interface portion of the hard mask layer proximate the resist layer has a higher metal content than other portions of the hard mask layer. The method further includes exposing the patterning material film stack to patterning radiation to form a desired pattern in the resist layer, developing the pattern formed in the resist layer, etching the hard mask layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The hard mask layer illustratively includes metal oxide, metal nitride and/or metal oxynitride, and may exhibit an elevated surface hydrophobicity due to its high metal content interface portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.