Adra Carr
20Patents
4h-index
40Co-inventors
55Inventor score
Filing activity: Sep 22, 2016 → Feb 22, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10276442B1 | Wrap-around contacts formed with multiple silicide layers | Electricity | 13 | Active |
| US10074727B2 | Low resistivity wrap-around contacts | Electricity | 13 | Active |
| US10367077B1 | Wrap around contact using sacrificial mandrel | Electricity | 4 | Active |
| US9831254B1 | Multiple breakdown point low resistance anti-fuse structure | Electricity | 4 | Active |
| US10916470B2 | Modified dielectric fill between the contacts of field-effect transistors | Electricity | 3 | Active |
| US10395925B2 | Patterning material film stack comprising hard mask layer having high metal content interface to resist layer | Physics | 3 | Active |
| US11205590B2 | Self-aligned contacts for MOL | Electricity | 2 | Active |
| US10361277B2 | Low resistivity wrap-around contacts | Electricity | 2 | Active |
| US10586872B2 | Formation of wrap-around-contact to reduce contact resistivity | Electricity | 2 | Active |
| US10446746B1 | ReRAM structure formed by a single process | Electricity | 2 | Active |
| US11289573B2 | Contact resistance reduction in nanosheet device structure | Electricity | 2 | Active |
| US10770562B1 | Interlayer dielectric replacement techniques with protection for source/drain contacts | Electricity | 1 | Active |
| US10978573B2 | Spacer-confined epitaxial growth | Electricity | 1 | Active |
| US11894423B2 | Contact resistance reduction in nanosheet device structure | Electricity | 0 | Active |
| US10734575B2 | ReRAM structure formed by a single process | Electricity | 0 | Active |
| US12040373B2 | Liner-free resistance contacts and silicide with silicide stop layer | Electricity | 0 | Active |
| US11024536B2 | Contact interlayer dielectric replacement with improved SAC cap retention | Electricity | 0 | Active |
| US10886376B2 | Formation of wrap-around-contact to reduce contact resistivity | Electricity | 0 | Active |
| US10896965B2 | Formation of wrap-around-contact to reduce contact resistivity | Electricity | 0 | Active |
| US11800817B2 | Phase change memory cell galvanic corrosion prevention | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.