Pulsing RF power in etch process to enhance tungsten gapfill performance
US10395944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2018 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | May 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for filling features with metal materials such as tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a metal such as a tungsten-containing material followed by removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ratio feature. The portion may be removed by exposing the tungsten-containing material to a plasma generated from a fluorine-containing nitrogen-containing gas and pulsing and/or ramping the plasma during the exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.