Method for forming a thin semiconductor-on-insulator (SOI) substrate
US10395974B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2018 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Apr 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30604
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate at low cost and with low total thickness variation (TTV). In some embodiments, an etch stop layer is epitaxially formed on a sacrificial substrate. A device layer is epitaxially formed on the etch stop layer and has a different crystalline lattice than the etch stop layer. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the etch stop layer are between the sacrificial and handle substrates. The sacrificial substrate is removed. An etch is performed into the etch stop layer to remove the etch stop layer. The etch is performed using an etchant comprising hydrofluoric acid, hydrogen peroxide, and acetic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.