Inventor · Kaohsiung, TW

Min-Ying Tsai

28Patents
2h-index
27Co-inventors
49Inventor score

Filing activity: Aug 31, 2015 → Feb 1, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10658410B2 Image sensor having improved full well capacity and related method of formation Electricity 8 Active
US10163949B2 Image device having multi-layered refractive layer on back surface Electricity 3 Active
US10163647B2 Method for forming deep trench structure Electricity 2 Active
US9754993B2 Deep trench isolations and methods of forming the same Electricity 2 Active
US11545513B2 Image sensor having improved full well capacity and related method of formation Electricity 1 Active
US10395974B1 Method for forming a thin semiconductor-on-insulator (SOI) substrate Electricity 1 Active
US11784204B2 Enhanced trench isolation structure Emerging Cross-Sectional Technologies 1 Active
US10971534B2 Image sensor having improved full well capacity and related method of formation Electricity 1 Active
US11398516B2 Conductive contact for ion through-substrate via Electricity 1 Active
US10923503B2 Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizes Electricity 1 Active
US11817469B2 Light absorbing layer to enhance P-type diffusion for DTI in image sensors Electricity 1 Active
US11171039B2 Composite semiconductor substrate, semiconductor device and method for manufacturing the same Electricity 0 Active
US12080738B2 Image sensor having stacked metal oxide films as fixed charge film Electricity 0 Active
US11069733B2 Image sensor having improved full well capacity and related method of formation Electricity 0 Active
US12349492B2 Photodiode structure for image sensor Electricity 0 Active
US12408448B2 Deep trench isolation structure and methods for fabrication thereof Electricity 0 Active
US10867834B2 Semiconductor structure and manufacturing method thereof Electricity 0 Active
US11101307B2 Image sensor having stacked conformal films Electricity 0 Active
US11929379B2 Conductive contact for ion through-substrate via Electricity 0 Active
US11869761B2 Back-side deep trench isolation structure for image sensor Electricity 0 Active
US11232975B2 Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength Electricity 0 Active
US12191191B2 Semiconductor structure and manufacturing method thereof Electricity 0 Active
US12087801B2 Deep trench isolations and methods of forming the same Electricity 0 Active
US12364048B2 Conductive contact for ion through-substrate via Electricity 0 Active
US11217621B2 Deep trench isolations and methods of forming the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.