Semiconductor device and method for fabricating the same
US10395991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2017 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Dec 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first gate structure and a second gate structure on a substrate and an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; transforming the first gate structure into a first metal gate and the second gate structure into a second metal gate; removing part of the ILD layer between the first metal gate and the second metal gate to form a recess; forming a first spacer and a second spacer in the a recess; performing a first etching process to form a first contact hole; and performing a second etching process to extend the first contact hole into a second contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.