Three-dimensional semiconductor device
US10396088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2017 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Oct 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional semiconductor device and a method of manufacturing the same are provided. The three-dimensional semiconductor device includes a stack structure including insulating layers and electrodes that are alternately stacked on a substrate, a horizontal semiconductor pattern between the substrate and the stack structure, vertical semiconductor patterns penetrating the stack structure and connected to the horizontal semiconductor pattern; and a common source plug at a side of the stack structure. The stack structure, the horizontal semiconductor pattern and the common source plug extend in a first direction. The horizontal semiconductor pattern includes a first sidewall extending in the first direction. The first sidewall has protrusions protruding toward the common source plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.