Systems and methods utilizing serial configurations of magnetic memory devices
US10403343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell apparatus is provided. The apparatus comprises two or more magnetic tunnel junctions (MTJs), including a first MTJ having a first magnetic characteristic and a first electrical characteristic and a second MTJ having a second magnetic characteristic and a second electrical characteristic. The first magnetic characteristic is distinct from the second magnetic characteristic. The apparatus further comprises a transistor having three terminals, where the first MTJ is coupled to a first terminal of the three terminals and a metallic separator coupling the first MTJ with the second MTJ. The first MTJ and the second MTJ are arranged in series.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.