Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same
US10403348B2 · kind B2 · utility
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3References
37Claims
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Key dates
| Filing date | Apr 12, 2016 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.