Wenping Geng
3Patents
1h-index
3Co-inventors
33Inventor score
Filing activity: Jun 26, 2015 → Jun 15, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9685216B2 | Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same | Electricity | 3 | Active |
| US10403348B2 | Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same | Electricity | 1 | Active |
| USRE49620E1 | Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same | General | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.