Memory device including a variable resistance material layer
US10403681B2 · kind B2 · utility
4Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/066
Abstract
A memory device is provided. The memory device includes a variable resistance layer. A selection device layer is electrically connected to the variable resistance layer. The selection device layer includes a chalcogenide switching material having a composition according to chemical formula 1 below, [GeASeBTeC](1-U)[X]U (1)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.