Inventor · Seoul, KR

Hideki Horii

51Patents
13h-index
47Co-inventors
84Inventor score

Filing activity: Nov 13, 1997 → Jun 11, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US5877062A Methods of forming integrated circuit capacitors having protected diffusion barrier metal layers therein Electricity 49 Expired
US6255187A Method of fabricating self-aligning stacked capacitor using electroplating method Electricity 38 Expired
US7638787B2 Phase changeable memory cell array region and method of forming the same Electricity 33 Active
US7037762B2 Phase changeable memory devices having multi-level data storage elements and methods of fabricating the same Electricity 32 Expired
US7800095B2 Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory Electricity 31 Active
US6630387B2 Method for forming capacitor of semiconductor memory device using electroplating method Electricity 28 Expired
US7038261B2 Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention Electricity 22 Expired
US7037749B2 Methods for forming phase changeable memory devices Electricity 19 Expired
US7558100B2 Phase change memory devices including memory cells having different phase change materials and related methods and systems Physics 19 Active
US8871559B2 Methods for fabricating phase change memory devices Electricity 17 Active
US7778066B2 Resistance variable memory device and programming method thereof Physics 16 Active
US6177284A Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereof Electricity 15 Expired
US7787278B2 Resistance variable memory device and operating method thereof Physics 15 Active
US7767568B2 Phase change memory device and method of fabricating the same Electricity 12 Active
US7763878B2 Phase changeable memory device structures Electricity 8 Active
US8552412B2 Variable resistance memory device and method of forming the same Electricity 7 Active
US6596149B2 Manufacturing method for capacitor having electrode formed by electroplating Electricity 7 Expired
US7060543B2 Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method Emerging Cross-Sectional Technologies 7 Expired
US7498064B2 Laser reflowing of phase changeable memory element to close a void therein Electricity 6 Expired
US9520556B2 Semiconductor device and method of fabricating the same Electricity 6 Active
US8299450B2 Non-volatile memory device including phase-change material Electricity 6 Active
US8580606B2 Method of forming resistance variable memory device Electricity 6 Active
US8238147B2 Multi-level phase change memory device, program method thereof, and method and system including the same Emerging Cross-Sectional Technologies 4 Active
US10403681B2 Memory device including a variable resistance material layer Electricity 4 Active
US7495456B2 System and method of determining pulse properties of semiconductor device Physics 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.