Phase-change memory
US10403682B2 · kind B2 · utility
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12Claims
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Assignee
Inventors
Key dates
| Filing date | May 1, 2018 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | May 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A phase-change memory includes a strip of phase-change material that is coated with a conductive strip and surrounded by an insulator. The strip of phase-change material has a lower face in contact with tips of a resistive element. A connection network composed of several levels of metallization coupled with one another by conducting vias is provided above the conductive strip. At least one element of a lower level of the metallization is in direct contact with the upper surface of the conductive strip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.