Inventor · Albany, NY, US

Pierre Morin

78Patents
7h-index
62Co-inventors
75Inventor score

Filing activity: Apr 23, 2001 → Feb 28, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8952420B1 Method to induce strain in 3-D microfabricated structures Electricity 17 Active
US9000498B2 FinFET with multiple concentration percentages Electricity 11 Active
US9236474B2 Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate Electricity 10 Active
US9607901B2 Integrated tensile strained silicon NFET and compressive strained silicon-germanium PFET implemented in FINFET technology Electricity 9 Active
US7187038B2 Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device Electricity 8 Expired
US9466718B2 Semiconductor device with fin and related methods Electricity 7 Active
USD631109S1 Foot pad for tilting inversion exerciser General 7 Expired
US9252208B1 Uniaxially-strained FD-SOI finFET Electricity 7 Active
US9245953B2 Method to induce strain in 3-D microfabricated structures Electricity 6 Active
US9548361B1 Method of using a sacrificial gate structure to make a metal gate FinFET transistor Electricity 6 Active
US9099559B2 Method to induce strain in finFET channels from an adjacent region Electricity 5 Active
US9406783B2 Method to induce strain in finFET channels from an adjacent region Electricity 5 Active
US9431538B2 Enhanced method of introducing a stress in a transistor channel by means of sacrificial sources/drain regions and gate replacement Electricity 5 Active
US10483393B2 Method to induce strain in 3-D microfabricated structures Electricity 4 Active
US9647086B2 Early PTS with buffer for channel doping control Electricity 4 Active
US10515965B2 Method to induce strain in finFET channels from an adjacent region Electricity 4 Active
US9679899B2 Co-integration of tensile silicon and compressive silicon germanium Electricity 4 Active
US6582258B2 Floating track device Performing Operations; Transporting 4 Expired
US10043805B2 Method to induce strain in finFET channels from an adjacent region Electricity 4 Active
US9166049B2 Method to enhance strain in fully isolated finFET structures Electricity 4 Active
US9806196B2 Semiconductor device with fin and related methods Electricity 3 Active
US10177255B2 Semiconductor device with fin and related methods Electricity 3 Active
US9287130B1 Method for single fin cuts using selective ion implants Electricity 3 Active
US10847654B2 Method to induce strain in 3-D microfabricated structures Electricity 2 Active
US10418488B2 Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.