Semiconductor device and semiconductor circuit including the device
US10403723B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 17, 2014 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Jan 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
A semiconductor device is disclosed. The semiconductor device includes a second conductive type substrate including a first first-conductive-type doping layer and a plurality of devices on the second conductive type substrate, wherein a first device of the devices includes a first nitride semiconductor layer on the first first-conductive-type doping layer, a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the first first-conductive-type doping layer and the first nitride semiconductor layer, a first contact electrically connected to the first heterojunction interface, and a contact connector electrically connecting the first contact to the first first-conductive-type doping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.